Lewa Micro · FETs & Power MOSFETs · MPN LWD6001AS
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| Output Capacitance(Coss) | 42pF |
|---|---|
| Pd - Power Dissipation | 2.2W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 24nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.056nF |
2.2W 60V 1.6V 35mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS