Lewa Micro · FETs & Power MOSFETs · MPN LWD6001A4
No reviews yet — be the first to review Lewa Micro LWD6001A4.
| Output Capacitance(Coss) | 42pF |
|---|---|
| Pd - Power Dissipation | 30W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 22nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 33.7mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 990pF |
30W 60V 1.6V 33.7mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4L Single FETs, MOSFETs RoHS