Lewa Micro LWD4003AD3

Lewa Micro · FETs & Power MOSFETs · MPN LWD4003AD3

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Specifications

Output Capacitance(Coss)93pF
Pd - Power Dissipation25W
Gate Charge(Qg)25.9nC
Configuration-
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)85pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.199nF

Technical details

25W 40V 1.6V 11mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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