Lewa Micro LWD4002A4

Lewa Micro · FETs & Power MOSFETs · MPN LWD4002A4

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Specifications

Output Capacitance(Coss)57pF
Pd - Power Dissipation25W
Configuration-
Gate Charge(Qg)16nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)15mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)727pF

Technical details

25W 40V 1.5V 15mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4L Single FETs, MOSFETs RoHS

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