Lewa Micro LWD4001AS

Lewa Micro · FETs & Power MOSFETs · MPN LWD4001AS

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Specifications

Output Capacitance(Coss)56pF
Pd - Power Dissipation2W
Configuration-
Gate Charge(Qg)17nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
RDS(on)19mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)49pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)710pF

Technical details

2W 40V 1.5V 19mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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