Lewa Micro LWD3004AS

Lewa Micro · FETs & Power MOSFETs · MPN LWD3004AS

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Specifications

Output Capacitance(Coss)113pF
Pd - Power Dissipation2W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)17nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)99pF
RDS(on)9mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)765pF

Technical details

2W 30V 1.5V 9mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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