Lewa Micro LWD3004AD3

Lewa Micro · FETs & Power MOSFETs · MPN LWD3004AD3

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Specifications

Output Capacitance(Coss)111pF
Pd - Power Dissipation18W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)17nC
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)96pF
RDS(on)9mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)762pF

Technical details

18W 30V 1.5V 9mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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