Lewa Micro LWD3001AD3

Lewa Micro · FETs & Power MOSFETs · MPN LWD3001AD3

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Specifications

Output Capacitance(Coss)180pF
Pd - Power Dissipation18W
Gate Charge(Qg)30nC
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
RDS(on)6.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)160pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.237nF

Technical details

18W 30V 1.5V 6.5mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS

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