Lewa Micro LW09N90SK

Lewa Micro · FETs & Power MOSFETs · MPN LW09N90SK

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation277W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)1.3Ω@10V

Technical details

900V 9A 5V 277W 1.3Ω@10V TO-247 Single FETs, MOSFETs RoHS

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