Lewa Micro LW04N90A9

Lewa Micro · FETs & Power MOSFETs · MPN LW04N90A9

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Specifications

Gate Charge(Qg)17.4nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)58pF
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation36W
RDS(on)3.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 900V 4A 36W Through Hole TO-220F

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