Lewa Micro · FETs & Power MOSFETs · MPN LW04N90A9
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| Gate Charge(Qg) | 17.4nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 58pF |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 36W |
| RDS(on) | 3.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
| Type | N-Channel |
N-Channel 900V 4A 36W Through Hole TO-220F