Leiditech FDMS86163P

Leiditech · FETs & Power MOSFETs · MPN FDMS86163P

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)52mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.12nF
TypeP-Channel

Technical details

P-Channel 100V 50A 140W Surface Mount DFN-8(4.9x5.7)

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