Leiditech AP4N15MI

Leiditech · FETs & Power MOSFETs · MPN AP4N15MI

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Specifications

Output Capacitance(Coss)36pF
Pd - Power Dissipation2W
Configuration-
Gate Charge(Qg)8nC
Drain to Source Voltage150V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)235pF

Technical details

2W 150V 1.8V 220mΩ@10V 1 N-channel N-Channel SOT-23-3L Single FETs, MOSFETs RoHS

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