KTP FQPF4N60SE

KTP · FETs & Power MOSFETs · MPN FQPF4N60SE

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)14.3nC@10V
Configuration-
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
RDS(on)2.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5.4pF
Number1 N-channel
Input Capacitance(Ciss)560pF

Technical details

N-Channel 600V 4A 50W Through Hole TO-220F

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