KTP FQD7N65SE

KTP · FETs & Power MOSFETs · MPN FQD7N65SE

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)38nC@10V
Configuration-
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)1.35Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1nF

Technical details

N-Channel 650V 7A 50W Surface Mount TO-252

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