KTP FQD50N06

KTP · FETs & Power MOSFETs · MPN FQD50N06

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)158pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation-
RDS(on)12.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)67pF
Number1 N-channel
Input Capacitance(Ciss)1.008nF

Technical details

N-Channel 60V 50A Surface Mount TO-252

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