KTP · FETs & Power MOSFETs · MPN FQD4N65SE
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| Gate Charge(Qg) | 14.3nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Configuration | - |
| Output Capacitance(Coss) | 48pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 2.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 560pF |
650V 4A 4V 50W 2.5Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS