KTP · FETs & Power MOSFETs · MPN FQD4N20
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 13.5nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 462pF |
N-Channel 200V 5A 45W Surface Mount TO-252