KTP FQD3N50XD

KTP · FETs & Power MOSFETs · MPN FQD3N50XD

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Specifications

Gate Charge(Qg)18nC@10V
Configuration-
Drain to Source Voltage500V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
RDS(on)2.4Ω@10V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)625pF

Technical details

500V 5A 2V 50W 2.4Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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