KTP FQD30N06S(KTP)

KTP · FETs & Power MOSFETs · MPN FQD30N06S(KTP)

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Specifications

Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)25.3nC@10V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)70pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
RDS(on)35mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)64pF
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

60V 30A 2.5V 45W 35mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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