KTP · FETs & Power MOSFETs · MPN FQD2N65SE
No reviews yet — be the first to review KTP FQD2N65SE.
| Drain to Source Voltage | 650V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 110nC@10V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 4.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
N-Channel 650V 2A 40W Surface Mount TO-252