KTP FQD20N06S

KTP · FETs & Power MOSFETs · MPN FQD20N06S

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)25.3nC@10V
Current - Continuous Drain(Id)20A
Output Capacitance(Coss)70pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
RDS(on)22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)64pF
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

N-Channel 60V 20A 45W Surface Mount TO-252

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