KTP BSC200N04

KTP · FETs & Power MOSFETs · MPN BSC200N04

No reviews yet — be the first to review KTP BSC200N04.

Specifications

Configuration-
Gate Charge(Qg)60nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)200A
Output Capacitance(Coss)1nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.9nF

Technical details

N-Channel 40V 200A 125W Surface Mount PDFN5x6-8L

Related FETs & Power MOSFETs