KTP BSC100N10

KTP · FETs & Power MOSFETs · MPN BSC100N10

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)24nC@10V
Current - Continuous Drain(Id)85A
Output Capacitance(Coss)618pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)7.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.293nF

Technical details

N-Channel 100V 85A 105W Surface Mount PDFN-8(5x6)

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