KTP BSC026N12HL(KTP)

KTP · FETs & Power MOSFETs · MPN BSC026N12HL(KTP)

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Specifications

Output Capacitance(Coss)1.339nF
Pd - Power Dissipation429W
Gate Charge(Qg)139nC
Configuration-
Drain to Source Voltage120V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)2.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 N-channel
Input Capacitance(Ciss)9.389nF

Technical details

429W 120V 3V 2.1mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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