KTP BSC023N10HS(KTP)

KTP · FETs & Power MOSFETs · MPN BSC023N10HS(KTP)

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Specifications

Output Capacitance(Coss)1.326nF
Pd - Power Dissipation250W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)176nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.133nF

Technical details

250W 100V 3V 1.5mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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