KTP BSC011N10HS-B(KTP)

KTP · FETs & Power MOSFETs · MPN BSC011N10HS-B(KTP)

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Specifications

Output Capacitance(Coss)1.93nF
Pd - Power Dissipation431W
Gate Charge(Qg)260nC
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)1.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)75pF
Number1 N-channel
Input Capacitance(Ciss)15.8nF

Technical details

431W 100V 3V 1.2mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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