KIA Semicon Tech · FETs & Power MOSFETs · MPN KPD8106A
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| Gate Charge(Qg) | 40nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 31mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.06nF |
60V 30A 2.5V 57W 31mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS