KIA Semicon Tech KNY6610A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNY6610A

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Specifications

Gate Charge(Qg)19.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation55W
RDS(on)83mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)31pF
Number1 N-channel
Input Capacitance(Ciss)1.073nF

Technical details

N-Channel 100V 15A 55W Surface Mount DFN-8(5x6)

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