KIA Semicon Tech KNS5610A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNS5610A

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Specifications

Gate Charge(Qg)26.2nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation22.7W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.535nF
TypeN-Channel

Technical details

N-Channel 100V 22.7W Surface Mount SOT-89

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