KIA Semicon Tech KNP3610A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNP3610A

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Specifications

Gate Charge(Qg)82nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)235pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)20mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)208pF
Number1 N-channel
Input Capacitance(Ciss)3.83nF
TypeN-Channel

Technical details

100V 60A Through Hole TO-220

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