KIA Semicon Tech KNP2910B

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNP2910B

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Specifications

Gate Charge(Qg)160nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)380pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.95nF
TypeN-Channel

Technical details

N-Channel 100V 130A Through Hole TO-220

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