KIA Semicon Tech KNP2908D

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNP2908D

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)640pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation246W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.5nF
TypeN-Channel

Technical details

80V 130A 4V 246W 6mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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