KIA Semicon Tech KNP2708A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNP2708A

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Specifications

Gate Charge(Qg)115nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)650pF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation313W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.3nF
Type-

Technical details

N-Channel 80V 160A 313W Through Hole TO-220

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