KIA Semicon Tech KNP1906A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNP1906A

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Specifications

Gate Charge(Qg)182nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.24nF
Current - Continuous Drain(Id)230A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation254W
Reverse Transfer Capacitance (Crss@Vds)565pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.85nF
TypeN-Channel

Technical details

N-Channel 60V 230A 254W Through Hole TO-220

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