KIA Semicon Tech KNF7N65B

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNF7N65B

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)80pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation42W
RDS(on)1.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

650V 7A 4V 42W 1.2Ω@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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