KIA Semicon Tech KNF10N65B

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNF10N65B

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

650V 10A 4V 45W 750mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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