KIA Semicon Tech · FETs & Power MOSFETs · MPN KND8606B
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 33nC@48V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
N-Channel 60V 35A 60W Surface Mount TO-252