KIA Semicon Tech KND8606B

KIA Semicon Tech · FETs & Power MOSFETs · MPN KND8606B

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)33nC@48V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation60W
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF

Technical details

N-Channel 60V 35A 60W Surface Mount TO-252

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