KIA Semicon Tech · FETs & Power MOSFETs · MPN KND7N65B
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 126W |
| RDS(on) | 1.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
650V 7A 4V 126W 1.2Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS