KIA Semicon Tech KND4360A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KND4360A

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation93W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

600V 4A 4V 93W 2.7Ω@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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