KIA Semicon Tech KND3508A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KND3508A

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)60A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 80V 60A Surface Mount TO-252

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