KIA Semicon Tech KND3203B

KIA Semicon Tech · FETs & Power MOSFETs · MPN KND3203B

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation101W
Reverse Transfer Capacitance (Crss@Vds)305pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.34nF
TypeN-Channel

Technical details

N-Channel 30V 100A 101W Surface Mount TO-252

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