KIA Semicon Tech KND3080

KIA Semicon Tech · FETs & Power MOSFETs · MPN KND3080

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)188pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation53W
RDS(on)4.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)170pF
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

30V 80A 1.5V 53W 4.3mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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