KIA Semicon Tech KNB2910A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNB2910A

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)630pF
Current - Continuous Drain(Id)130A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.8nF
TypeN-Channel

Technical details

100V 130A 4V 300W 9mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS

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