KIA Semicon Tech KNB2908D

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNB2908D

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)110nC@10V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation246W
RDS(on)4.8mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

80V 130A 3V 246W 4.8mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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