KIA Semicon Tech KNB2706A

KIA Semicon Tech · FETs & Power MOSFETs · MPN KNB2706A

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Specifications

Gate Charge(Qg)200nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)730pF
RDS(on)2.8mΩ@10V
Number1 N-channel

Technical details

N-Channel 60V 150A 320W Surface Mount TO-263

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