KIA Semicon Tech · FETs & Power MOSFETs · MPN KNB1906A
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| Gate Charge(Qg) | 182nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.24nF |
| Current - Continuous Drain(Id) | 230A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 254W |
| Reverse Transfer Capacitance (Crss@Vds) | 565pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.85nF |
| Type | - |
60V 230A 4V 254W 3.5mΩ@10V 1 N-channel TO-263-2 Single FETs, MOSFETs RoHS