KIA Semicon Tech KIA840SB

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA840SB

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)960pF
TypeN-Channel

Technical details

N-Channel 500V Surface Mount TO-263

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