KIA Semicon Tech KIA50N06CY

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA50N06CY

No reviews yet — be the first to review KIA Semicon Tech KIA50N06CY.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)52nC@10V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation90W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)130pF
Number1 N-channel
Input Capacitance(Ciss)2.45nF
TypeN-Channel

Technical details

60V 50A 1.6V 90W 11mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs