KIA Semicon Tech KIA50N06BD

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA50N06BD

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)755pF
Current - Continuous Drain(Id)50A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)375pF
RDS(on)12.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.06nF
TypeN-Channel

Technical details

N-Channel 60V 88W Surface Mount TO-252-2(DPAK)

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