KIA Semicon Tech KIA40N20AF

KIA Semicon Tech · FETs & Power MOSFETs · MPN KIA40N20AF

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation175W
RDS(on)80mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)150pF
Number1 N-channel
Input Capacitance(Ciss)1.56nF

Technical details

N-Channel 200V 40A 175W Through Hole TO-220F

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